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Number of Publications

10 Number of Publications

“Separation of the different components of the drain current in narrow channel MOS SIMOX transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 83-94, Sep.

1994
Abstract

“Simulation of narrow channel effects in SIMOX MOS transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 165-180, March.

1994
Abstract

“Degradation of the electronic properties of Gamma—irradiated SIMOX transistors” Proceedings of the first International Conference on Microelectronics, circuits and systems ,Cairo, Egypt, pp. 871—875, Dec 19—22.

1994
Abstract

“Damage introduced in silicon on insulator materials during fabrication by oxygen ion implantation technique” Al—Azhar Engineering 3rd International Conference, Cairo, Egypt, vol 6, pp. 37—48, Dec. 18—21.

1993
Abstract

“Measurement and modeling of drain current DLTS in Enhancement SOI MOSFETS” Microelectronics Journal, vol 24, pp.647—657

1993
Abstract

“Detailed analysis of edge effects in SIMOX-MOS transistors” IEEE Trans. Electron Devices, vol. ED-39, pp. 874—882, April

1992
Abstract

“A new transient drain current technique for interface characterization in SOI MOSFET’s” Proceedings of the 5th International Symposium On Silicon On Insulator Technology and Devices, USA, vol.92—13, pp. 195—202.

1992
Abstract

“Noise associated with floating body effects in Silicon-On—Insulator MOS transistors” Proceeding. of the 1991 International Conference on Microelectronics, Cairo, Egypt, PP. 345—348, Dec. 21—23.

1991
Abstract

“A new approach to current DLTS in enhancement—mode MOSFET’s: Application to SIMOX devices” roceedings of the IEEE International S0I Conference, Colorado, USA, pp. 98—99.

1991
Abstract

“Reliability aspects. of tunnel oxides under different Fowler—Nordheim stress conditions” Proceeding. of the 1991 International Conference on Microelectronics, Cairo, Egypt, PP. 304—307, Dec. 21—23.

1991
Abstract