| publication name | “Degradation of the electronic properties of Gamma—irradiated SIMOX transistors” Proceedings of the first International Conference on Microelectronics, circuits and systems ,Cairo, Egypt, pp. 871—875, Dec 19—22. |
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| Authors | A. I. EL-SHANSHOURY, M. T. ELEWA, H. F. RAGAIE and I.A. EL—SHANSHOURY |
| year | 1994 |
| keywords | |
| journal | |
| volume | Not Available |
| issue | Not Available |
| pages | Not Available |
| publisher | Not Available |
| Local/International | Local |
| Paper Link | Not Available |
| Full paper | download |
| Supplementary materials | Not Available |
Abstract
Not Available