publication.publication

“Separation of the different components of the drain current in narrow channel MOS SIMOX transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 83-94, Sep.

1994

“Simulation of narrow channel effects in SIMOX MOS transistors” Ain Shams University Engineering Bulletin, vol 29, pp. 165-180, March.

1994

“Degradation of the electronic properties of Gamma—irradiated SIMOX transistors” Proceedings of the first International Conference on Microelectronics, circuits and systems ,Cairo, Egypt, pp. 871—875, Dec 19—22.

1994

“Damage introduced in silicon on insulator materials during fabrication by oxygen ion implantation technique” Al—Azhar Engineering 3rd International Conference, Cairo, Egypt, vol 6, pp. 37—48, Dec. 18—21.

1993

“Measurement and modeling of drain current DLTS in Enhancement SOI MOSFETS” Microelectronics Journal, vol 24, pp.647—657

1993

“Detailed analysis of edge effects in SIMOX-MOS transistors” IEEE Trans. Electron Devices, vol. ED-39, pp. 874—882, April

1992

“A new transient drain current technique for interface characterization in SOI MOSFET’s” Proceedings of the 5th International Symposium On Silicon On Insulator Technology and Devices, USA, vol.92—13, pp. 195—202.

1992

“Noise associated with floating body effects in Silicon-On—Insulator MOS transistors” Proceeding. of the 1991 International Conference on Microelectronics, Cairo, Egypt, PP. 345—348, Dec. 21—23.

1991

“A new approach to current DLTS in enhancement—mode MOSFET’s: Application to SIMOX devices” roceedings of the IEEE International S0I Conference, Colorado, USA, pp. 98—99.

1991

“Reliability aspects. of tunnel oxides under different Fowler—Nordheim stress conditions” Proceeding. of the 1991 International Conference on Microelectronics, Cairo, Egypt, PP. 304—307, Dec. 21—23.

1991

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