Staff Members - Benha University
DESIGN OF X-BAND POWER AMPLIFIER FOR LEO SATELLITE TRANSMITTER
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS • 2015
Publication Information
Authors
Islam Mansour, Hadia Elhennawy,and Adly S. Tag El-Dien
Keywords
low earth orbit; X-band; power amplifiers; PHEMT; inductive
degeneration; LPF
Journal
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Publisher
Not Available
Volume
57
Issue
4
Pages
860-865
publication.type
International
Paper Link
Not Available
Supplementary Materials
Not Available
Abstract
The design of a three-stage X-band power amplifier (PA)
is presented in this article. The amplifier is realized using an ATF-
38143 low noise PHEMT FET. The proposed PA achieves 17–18.3 dB
power gain, a good input matching (S11
is presented in this article. The amplifier is realized using an ATF-
38143 low noise PHEMT FET. The proposed PA achieves 17–18.3 dB
power gain, a good input matching (S11