DESIGN OF X-BAND POWER AMPLIFIER FOR LEO SATELLITE TRANSMITTER
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS • 2015
معلومات البحث
المؤلفون
Islam Mansour, Hadia Elhennawy,and Adly S. Tag El-Dien
الكلمات المفتاحية
low earth orbit; X-band; power amplifiers; PHEMT; inductive
degeneration; LPF
المجلة العلمية
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
الناشر
Not Available
المجلد
57
العدد
4
الصفحات
860-865
publication.type
International
رابط البحث
Not Available
المواد المرفقة
Not Available
الملخص
The design of a three-stage X-band power amplifier (PA)
is presented in this article. The amplifier is realized using an ATF-
38143 low noise PHEMT FET. The proposed PA achieves 17–18.3 dB
power gain, a good input matching (S11
is presented in this article. The amplifier is realized using an ATF-
38143 low noise PHEMT FET. The proposed PA achieves 17–18.3 dB
power gain, a good input matching (S11
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