Staff Members - Benha University
“Solution of Schrödinger equation in double-gate MOSFETs using transfer matrix method,” Electronic Letters, vol. 40, No. 20, p. 1307.
Electronics Letters • 2004
Publication Information
Authors
T. M. Abdolkader, H. H. Hassan, W. Fikry, and O. A. Omar
Keywords
Not Available
Journal
Electronics Letters
Publisher
Not Available
Volume
40
Issue
20
Pages
1307-1308
publication.type
International
Paper Link
Not Available
Supplementary Materials
Not Available
Abstract
The transfer matrix method (TMM) has been extensively used to investigate quantum-mechanical tunnelling through potential barriers. Reported is the application of TMM, for the first time, to solve the Schrodinger equation in double-gate MOSFETs. The method is shown to be more accurate than the conventional finite difference method, especially for high energy levels.