| publication name | “Solution of Schrödinger equation in double-gate MOSFETs using transfer matrix method,” Electronic Letters, vol. 40, No. 20, p. 1307. |
|---|---|
| Authors | T. M. Abdolkader, H. H. Hassan, W. Fikry, and O. A. Omar |
| year | 2004 |
| keywords | |
| journal | Electronics Letters |
| volume | 40 |
| issue | 20 |
| pages | 1307-1308 |
| publisher | Not Available |
| Local/International | International |
| Paper Link | Not Available |
| Full paper | download |
| Supplementary materials | Not Available |
Abstract
The transfer matrix method (TMM) has been extensively used to investigate quantum-mechanical tunnelling through potential barriers. Reported is the application of TMM, for the first time, to solve the Schrodinger equation in double-gate MOSFETs. The method is shown to be more accurate than the conventional finite difference method, especially for high energy levels.