| publication name | “A Computationally efficient method for quantum transport simulation of double-gate MOSFETs,” 2009 National Radio Science Conference, NRSC 2009, March 17- 19. |
|---|---|
| Authors | Y.M. Sabry, M. T. Abdel-Hafez, T.M. Abdolkader, and W.F. Farouk |
| year | 2009 |
| keywords | Quantum chemistry Differential equations Galerkin methods Green's function MOSFET devices Quantum electronics |
| journal | |
| volume | Not Available |
| issue | Not Available |
| pages | Not Available |
| publisher | Not Available |
| Local/International | Local |
| Paper Link | Not Available |
| Full paper | download |
| Supplementary materials | Not Available |
Abstract
Quantum effects play an important role in determining the Double-Gate (DG) MOSFETs characteristics. The Non-Equilibrium Green's Function (NEGF) formalism provides a rigorous description of quantum transport in nanoscale devices. The traditional NEGF is heavy in computations and not suitable for 3D or even 2D device simulation. In this article, we propose a method that reduces the simulation time dramatically without loss of accuracy. The proposed method is used to simulate a 5 nm channel length DG MOSFET. The simulation time is reduced from 72 minutes to 11 minutes per bias point on a home PC: Intel® Pentium 4 CPU 2.4GHz, 768 MB RAM.