CdTe Quantum Dots Sensitized TiO2 Electrodes for Photovoltaic Cells
• 2014
معلومات البحث
المؤلفون
Ali Badawi1, 2, Najm Al-Hosiny2, Said Abdallah2, 3, Sohair Nagm3 and Hassan Talaat1
الكلمات المفتاحية
Not Available
المجلة العلمية
Not Available
الناشر
Not Available
المجلد
Not Available
العدد
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الصفحات
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publication.type
International
رابط البحث
Not Available
المواد المرفقة
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الملخص
The preparation and photovoltaic characterization of CdTe quantum dot-sensitized solar cells (QDSSCs) is presented.
Fluorine doped Tin Oxide (FTO) substrates were coated with 20 nm-diameter TiO2 nanoparticles (NPs). Presynthesized colloidal CdTe
quantum dots of radius R = 2.1 nm were deposited on the TiO2-coated substrates using direct adsorption (DA) method, by dipping for
different times at ambient conditions. The FTO counter electrodes were coated with platinum, while the electrolyte containing I−/ I−
3
redox species was sandwiched between the two electrodes. The J-V characteristic curves of the assembled QDSSCs were measured at
different simulated sunlight power. The short current density (Jsc) and efficiency (η) increase with dipping time. At 50 h dipping time,
and AM 1.5 simulated sunlight, the open-circuit photovoltage Voc, the short circuit photocurrent density Jsc, fill factor FF, and the
efficiency for energy conversion η were 0.5 volts , 1,105 μA/cm2, 0.43 and 0.19%, respectively. Furthermore, the Jsc increases linearly
with increasing the intensities of the sun light which indicates the stability of the assembled cells.
Fluorine doped Tin Oxide (FTO) substrates were coated with 20 nm-diameter TiO2 nanoparticles (NPs). Presynthesized colloidal CdTe
quantum dots of radius R = 2.1 nm were deposited on the TiO2-coated substrates using direct adsorption (DA) method, by dipping for
different times at ambient conditions. The FTO counter electrodes were coated with platinum, while the electrolyte containing I−/ I−
3
redox species was sandwiched between the two electrodes. The J-V characteristic curves of the assembled QDSSCs were measured at
different simulated sunlight power. The short current density (Jsc) and efficiency (η) increase with dipping time. At 50 h dipping time,
and AM 1.5 simulated sunlight, the open-circuit photovoltage Voc, the short circuit photocurrent density Jsc, fill factor FF, and the
efficiency for energy conversion η were 0.5 volts , 1,105 μA/cm2, 0.43 and 0.19%, respectively. Furthermore, the Jsc increases linearly
with increasing the intensities of the sun light which indicates the stability of the assembled cells.
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