| publication name | “Adaptation of the charge pumping Technique to gated P-I-N diodes fabricated on Silicon on insulator” EEE Trans. Electron Devices, vol. ED-38, pp. 1432—1444. |
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| Authors | T. OUISSE, S. CRISTOLOVEANU, T. ELEWA, H. HADDARA, G. BOREL, and D. IOANNOU |
| year | 1991 |
| keywords | |
| journal | |
| volume | Not Available |
| issue | Not Available |
| pages | Not Available |
| publisher | Not Available |
| Local/International | Local |
| Paper Link | Not Available |
| Full paper | download |
| Supplementary materials | Not Available |
Abstract
Not Available