Staff Members - Benha University
“Double-gate Silicon on insulator transistor with volume inversion A new device with greatly enhanced performance” IEEE Electron Device Lett., vol. EDL-8, pp. 410—413.
• 1987
Publication Information
Authors
F. BALESTRA, S. GRISTOLOVEANU, M. BENACHIR., J. BRINI and T. ELEWA
Keywords
Not Available
Journal
Not Available
Publisher
Not Available
Volume
Not Available
Issue
Not Available
Pages
Not Available
publication.type
International
Paper Link
Not Available
Supplementary Materials
Not Available
Abstract
Not Available