| publication name | “Double-gate Silicon on insulator transistor with volume inversion A new device with greatly enhanced performance” IEEE Electron Device Lett., vol. EDL-8, pp. 410—413. |
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| Authors | F. BALESTRA, S. GRISTOLOVEANU, M. BENACHIR., J. BRINI and T. ELEWA |
| year | 1987 |
| keywords | |
| journal | |
| volume | Not Available |
| issue | Not Available |
| pages | Not Available |
| publisher | Not Available |
| Local/International | International |
| Paper Link | Not Available |
| Full paper | download |
| Supplementary materials | Not Available |
Abstract
Not Available