A Schottky device with structure (Ag/PVA-Ag-Coumarin/n-Si) has been fabricated for optical photodiode applications. It has been fabricated via a spin coating technique after preparing PVA-Ag nano-composite using the in-situ technique and then adding Coumarin dye. The photodiode device has displayed good rectification behavior proving the creation of Schottky junction. The high value of the junction parameters, e.g. series resistance Rse = 15 kΩ, ideality factor n = 1.463, as well as height barrier ϕ = 0.779 eV are calculated from the forward bias I–V characteristics at 50 mW/cm2 due to the interfaces between the fillers and PVA, creation of barrier height at the interfaces between fillers and PVA, inhomogeneity of the barrier of an interfacial layer of PVA, fabrication and surface processes. Interestingly, Ag/PVA-Ag-Coumarin/n-Si photodiode shows a rise time of 90.2 ms and fall time of 340.6 ms at 50 mW/cm2. Also …