The rates of hydrogen peroxide decomposition on pure, doped and gamma-irradiated oxides Chromium oxide, Cobalt oxide, Magnesium oxide Nickel oxide, Ferric oxide, Magnesium ferri oxide were measured in a temperature range of 25-40 degree centigrade. It was found that lattice defect induced by doping and gamma-irradiation affect the catalytic properties of the oxides, either by activation or deactivation. The correlation between the catalytic activity for the hydrogen peroxide decomposition and the electronic defects produced by doping and by gamma-irradiation in the oxides is dicussed. Generally, it was found that the p-type semiconductor oxides are more active towards hydrogen peroxide decomposition than the n-type semiconductor oxides.