Theme-Logo
  • Login
  • Home
  • Course
  • Publication
  • Theses
  • Reports
  • Published books
  • Workshops / Conferences
  • Supervised PhD
  • Supervised MSc
  • Supervised projects
  • Education
  • Language skills
  • Positions
  • Memberships and awards
  • Committees
  • Experience
  • Scientific activites
  • In links
  • Outgoinglinks
  • News
  • Gallery
publication name Analysis and Implementation of High-Q CT Inductor for Compact and Wide- Tuning Range Ku-Band VCO
Authors Islam Mansour, Mohamed Aboualalaa, Adel Barakat, Ahmed Allam, Adel B. Abdel-Rahman, Mohammed Abo-Zahhad, and Ramesh K. Pokharel
year 2020
keywords Center tap inductor, CMOS technology, Ku-band VCO, figure of merit, phase noise, tuning range.
journal IEEE Microwave and Wireless Components Letters
volume 30
issue 8
pages 802-805
publisher IEEE
Local/International International
Paper Link https://ieeexplore.ieee.org/document/9134404
Full paper download
Supplementary materials Not Available
Abstract

This work presents a new structure of center tap (CT) inductor to improve the performance of Ku-band Voltage-Controlled Oscillators (VCOs). Conventional CT inductor provided by the foundry suffers from a poor Quality (Q-) factor large area, and low self-resonance frequency. These problems are solved by introducing a coupling structure. In the proposed CT inductor, in spite of its size is miniaturized by 51 %, the Q-factor is soared by 41 % in the frequency range of 5 GHz to 30 GHz compared to a conventional CT inductor. The measured differential inductance and quality factor of the proposed inductor are 385 pH and 22 at 12 GHz. Later, the proposed CT inductor is employed to design a compact and wide tuning-range voltage-controlled oscillator (VCO) at Ku-band in 0.18 µm CMOS technology, and this leads to 5.8 dB phase noise improvement compared to the use of a conventional CT inductor. The fabricated VCO has a compact core size of 140 µm × 400 µm only. The VCO chip oscillates from 11.7 GHz to 13.7 GHz. The measured phase noise is -107.7 dBc/Hz at 1 MHz offset frequency at a carrier frequency of 13.7 GHz, and dc power consumption of the VCO core is 4 mW which results in a figure of merit (FoM) normalized to the die area (FoMA) to be -197 dBc/Hz.

Benha University © 2023 Designed and developed by portal team - Benha University