Metal Oxide Semiconductor Field Effect Transistor “MOSFET” devices are crucial to all of the modern electronic technology and expected to be for some years to come. The aim of this paper is to experimentally validate the vital characteristics of an N- channel enhancement mode power MOSFET. Static and dynamic characteristics are investigated and graphed alongside extracting the main device static parameters that well-describe the device behavior. These parameters are the threshold voltage, the on-state and output resistances, the early voltage, the channel length modulation parameter and the conduction parameter. The input, output and reverse transfer capacitances are measured as functions of the drain-source voltage. Finally, the switching characteristics are examined with calculating graphically all the controlling on/off-states switching times needed.