The quantum characteristics of the single walled carbon nanotube (SWCNT) quantum dot device are investigated under the
effect of an external strain. This device is modeled as single walled carbon nanotube quantum dot connected to metallic leads.
These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this three-terminal
device. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The
substances at the carbon nanotube quantum dot/ metal contact are controlled by the back gate. The electric current is deduced
using Landauer-Buttiker formula. Numerical calculations are performed for armchair SWCNT and zigzag SWCNT and the
obtained results show that both energy gap and the current are chiral dependent. So, results show that due to the effect of strain,
the quantum transport characteristics of the present device are changed. Periodic oscillatory behavior of the current for both
types of SWCNTs might be due Coulomb oscillation and the THz-photon assisted tunneling (PAT) of an electron in the
SWCNT QD to the drain electrode. The present research is very important in the field of nanoelectronics devices and
nanoelectromechanical system resonators.