Physical and optical properties of a-Ge-Sb-Se-Te bulk and film samples: Refractive index and its association with electronic polarizability of thermally evaporated a-Ge15-xSbxSe50Te35 thin-films
Journal of Non-Crystalline Solids • 2021
Publication Information
Authors
Ahmed Saeed Hassaniena, Ishu Sharma, Alaa A. Akl
Keywords
Amorphous semiconductors
Quaternary chalcogenides
Bulk and thin films
Physical properties
Electronic polarizability
Average heat of atomization
Journal
Journal of Non-Crystalline Solids
Publisher
Elsevier
Volume
531
Issue
Not Available
Pages
119853 (1-13)
publication.type
Local
Paper Link
Open Link
Supplementary Materials
Not Available
Abstract
This work is dedicated to the deduction of many basic physical parameters of a-Ge15-xSbxSe50Te35 bulk and thinfilm
samples, GSST (0.0 ≤ x ≤ 15.0 at.wt.%). Besides, study the interrelationships among refractive index,
molar refractivity and electronic polarizability of these film samples. Solid-state solutions of GSST compositions
were prepared followed by melt-quenching method to get the glassy bulk samples. The thin-film samples of
thickness 200 nm were fabricated by thermal evaporation technique. X-ray diffractograms revealed that all
prepared GSST bulk and film samples are of non-crystalline nature. The ingots bulk Ge-Sb-Se-Te samples have
been used to practically estimate the density. The refractive index of Ge15-xSbxSe50Te35 amorphous thin-films
have been utilized to discuss the electronic polarizability, Covalence parameter and optical electronegativity. As
well as, the deviation from stoichiometry, average heat of atomization, the overall mean bond energy and the
glass transition temperature are also evaluated. All studied parameters are highly dependent on the Sb-ratio.
samples, GSST (0.0 ≤ x ≤ 15.0 at.wt.%). Besides, study the interrelationships among refractive index,
molar refractivity and electronic polarizability of these film samples. Solid-state solutions of GSST compositions
were prepared followed by melt-quenching method to get the glassy bulk samples. The thin-film samples of
thickness 200 nm were fabricated by thermal evaporation technique. X-ray diffractograms revealed that all
prepared GSST bulk and film samples are of non-crystalline nature. The ingots bulk Ge-Sb-Se-Te samples have
been used to practically estimate the density. The refractive index of Ge15-xSbxSe50Te35 amorphous thin-films
have been utilized to discuss the electronic polarizability, Covalence parameter and optical electronegativity. As
well as, the deviation from stoichiometry, average heat of atomization, the overall mean bond energy and the
glass transition temperature are also evaluated. All studied parameters are highly dependent on the Sb-ratio.
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