Staff Members - Benha University
“A Computationally efficient method for quantum transport simulation of double-gate MOSFETs,” 2009 National Radio Science Conference, NRSC 2009, March 17- 19.
• 2009
Publication Information
Authors
Y.M. Sabry, M. T. Abdel-Hafez, T.M. Abdolkader, and W.F. Farouk
Keywords
Quantum chemistry
Differential equations
Galerkin methods
Green's function
MOSFET devices
Quantum electronics
Journal
Not Available
Publisher
Not Available
Volume
Not Available
Issue
Not Available
Pages
Not Available
publication.type
Local
Paper Link
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Supplementary Materials
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Abstract
Quantum effects play an important role in determining the Double-Gate (DG) MOSFETs characteristics. The Non-Equilibrium Green's Function (NEGF) formalism provides a rigorous description of quantum transport in nanoscale devices. The traditional NEGF is heavy in computations and not suitable for 3D or even 2D device simulation. In this article, we propose a method that reduces the simulation time dramatically without loss of accuracy. The proposed method is used to simulate a 5 nm channel length DG MOSFET. The simulation time is reduced from 72 minutes to 11 minutes per bias point on a home PC: Intel® Pentium 4 CPU 2.4GHz, 768 MB RAM.