Crystal imperfections and Mott parameters of sprayed nanostructure IrO2 thin films
Physica B: Physics of Condensed Matter • 2015
Publication Information
Authors
A.S. Hassanien, Alaa A. Akl
Keywords
Thin films,
Chemical synthesis,
X-ray diffraction,
Defects and
Electrical properties
Journal
Physica B: Physics of Condensed Matter
Publisher
Elsevier
Volume
Volume 473
Issue
15 September 2015
Pages
11–19
publication.type
International
Paper Link
Open Link
Supplementary Materials
Not Available
Abstract
Nano-crystalline iridium oxide thin films were obtained by spray pyrolysis technique onto
preheated glass substrates. X-ray diffraction reveals that, IrO2 thin films were polycrystalline in
the rutile structure with primitive tetragonal lattice and its preferential orientation were along the
and directions. X-ray diffraction line profile analysis (XRDLPA) was used to
assign microstructure and crystal imperfections of IrO2 thin films. Some important parameters
such as crystallite size, microstrain, average residual stress, number of crystallite/cm2
and
dislocation density were studied. The effect of deposition temperatures and solution
concentrations on the microstructural and crystal defects were discussed. All estimated values
were found to be dependent upon the growth parameters. Mott parameters, trapping state energy
and potential barrier were investigated and studied for a defined thin film sample. This sample
was selected because it has the suitable conditions for electrochromic applications.
preheated glass substrates. X-ray diffraction reveals that, IrO2 thin films were polycrystalline in
the rutile structure with primitive tetragonal lattice and its preferential orientation were along the
and directions. X-ray diffraction line profile analysis (XRDLPA) was used to
assign microstructure and crystal imperfections of IrO2 thin films. Some important parameters
such as crystallite size, microstrain, average residual stress, number of crystallite/cm2
and
dislocation density were studied. The effect of deposition temperatures and solution
concentrations on the microstructural and crystal defects were discussed. All estimated values
were found to be dependent upon the growth parameters. Mott parameters, trapping state energy
and potential barrier were investigated and studied for a defined thin film sample. This sample
was selected because it has the suitable conditions for electrochromic applications.
Staff Members - Benha University