Dielectric properties of nano-(MgO–Gd2O3) Co-doped alumina for high voltage insulators
• 2020
معلومات البحث
المؤلفون
S.M. Naga, N. El-Mehalawya, M. Awaad,T. Eliyan
الكلمات المفتاحية
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المجلة العلمية
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الناشر
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المجلد
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العدد
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الصفحات
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publication.type
International
رابط البحث
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المواد المرفقة
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الملخص
The effect of doping with nano-MgO and co-doping with nano-MgO–Gd2O3 on the densification behavior, mechanical
properties, and dielectric behavior of alumina was evaluated. Magnesium oxide-doped alumina nanoparticles
were prepared by the sol-gel method with varying nano-MgO ratios (5, 6, and 7 mass %). Alumina
samples containing 7 mass % MgO showed the highest densification and exhibited the greatest mechanical
strength due to reduced porosity (3.22 % for 1750 °C). The doping of alumina with nano-MgO also improved the
breakdown voltage and resistivity. Co-doping of alumina also enhanced the densification and mechanical
properties of sintered samples. The sample co-doped with a low content of nano-MgO–Gd2O3 (7 and 1 mass %,
respectively) and sintered at 1750 °C for 1 h displayed the best properties among the studied samples. They
exhibited the best electrical properties, with the highest breakdown voltage and resistivity, and the lowest
permittivity and dielectric loss.
properties, and dielectric behavior of alumina was evaluated. Magnesium oxide-doped alumina nanoparticles
were prepared by the sol-gel method with varying nano-MgO ratios (5, 6, and 7 mass %). Alumina
samples containing 7 mass % MgO showed the highest densification and exhibited the greatest mechanical
strength due to reduced porosity (3.22 % for 1750 °C). The doping of alumina with nano-MgO also improved the
breakdown voltage and resistivity. Co-doping of alumina also enhanced the densification and mechanical
properties of sintered samples. The sample co-doped with a low content of nano-MgO–Gd2O3 (7 and 1 mass %,
respectively) and sintered at 1750 °C for 1 h displayed the best properties among the studied samples. They
exhibited the best electrical properties, with the highest breakdown voltage and resistivity, and the lowest
permittivity and dielectric loss.
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