Numerical study of flexible perovskite/Si tandem solar cell using TCAD simulation
Optical and Quantum Electronics • 2023
معلومات البحث
المؤلفون
T I Alanazi; O I Eid; Mohamed Okil
الكلمات المفتاحية
Thin film; Perovskite; Silicon; Tandem; VBO; Current matching; TCAD
المجلة العلمية
Optical and Quantum Electronics
الناشر
Springer
المجلد
55
العدد
13
الصفحات
1152
publication.type
International
رابط البحث
Open Link
المواد المرفقة
Not Available
الملخص
This work presents the design of a monolithic thin-film tandem solar cell (TSC), that comprises
of a front perovskite (PVK) sub-cell along with a rear thin Si sub-cell. The study
begins by calibrating the individual sub-cells versus experimental studies, resulting in a
power conversion efficiency (PCE) of 12.70% regarding the front cell and 24.47% regarding
the rear cell. When combining the two sub-cells in a PVK/Si configuration, the initial
tandem achieves an efficiency of 22.36% and a short-circuit current density (Jsc) of
15.29 mA/cm2. To enhance the functionality of the proposed TSC, we design the top hole
transport layer to achieve a suitable valence band offset and inspect the influence of altering
the defect concentration of the front sub-cell absorber and the thicknesses of both absorbers
to maximize the PCE. The optimized TSC, under the current matching circumstance,
shows an improved Jsc of 19.25 mA/cm2 and a PCE of 32.25%. All performed simulations
are conducted by employing a Silvaco Atlas device simulator with one Sun spectrum illumination
(AM1.5G, 1000 W/m2). This TCAD simulation study offers potential ways to
advance low-cost, efficient thin-film TSCs that are suitable for flexible applications.
of a front perovskite (PVK) sub-cell along with a rear thin Si sub-cell. The study
begins by calibrating the individual sub-cells versus experimental studies, resulting in a
power conversion efficiency (PCE) of 12.70% regarding the front cell and 24.47% regarding
the rear cell. When combining the two sub-cells in a PVK/Si configuration, the initial
tandem achieves an efficiency of 22.36% and a short-circuit current density (Jsc) of
15.29 mA/cm2. To enhance the functionality of the proposed TSC, we design the top hole
transport layer to achieve a suitable valence band offset and inspect the influence of altering
the defect concentration of the front sub-cell absorber and the thicknesses of both absorbers
to maximize the PCE. The optimized TSC, under the current matching circumstance,
shows an improved Jsc of 19.25 mA/cm2 and a PCE of 32.25%. All performed simulations
are conducted by employing a Silvaco Atlas device simulator with one Sun spectrum illumination
(AM1.5G, 1000 W/m2). This TCAD simulation study offers potential ways to
advance low-cost, efficient thin-film TSCs that are suitable for flexible applications.
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