The quantum spin and valley transport characteristics in normal silicene/ferromagnetic silicene/ normal silicene junction are investigated under the effects of magnetic field and the frequency of the induced ac-field. The spin and valley resolved conductances are deduced by solving the Dirac equation. Numerical calculations are performed and results show an oscillatory behavior to both spin and valley resolved conductances which due to resonant tunneling regime of the confined states of ferromagnetic silicene. Spin and valley polarizations are calculated. Their values show that spin and valley polarizations might be tuned by the applied gate voltage, or in other words, by electric field. The present paper is very promising for spintronics application of silicene.