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Strain Effect on Transport Properties of Chiral Carbon Nanotube Nanodevice

International Journal of Nanoscience and Nanoengineering • 2015
العودة
معلومات البحث
المؤلفون Adel H. Phillips,Mina Danial Asham,Hend A. El-Demsisy
الكلمات المفتاحية SWCNT Quantum Dot, Strain Effect, Ac-field, Magnetic Field, Nanodevice
المجلة العلمية International Journal of Nanoscience and Nanoengineering
الناشر open science
المجلد 2
العدد 2
الصفحات 6_11
publication.type International
رابط البحث Not Available
المواد المرفقة Not Available
الملخص
The quantum transport properties of chiral single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated
under the effect of tensile strain. This nanodevice is modeled as single walled carbon nanotube quantum dot connected to
metallic leads. These two metallic leads operate as a source and a drain. The conducting substance is the gate electrode in this
three-terminal nanodevice. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube
channel. The substances at the carbon nanotube quantum dot/ metal contact are controlled by the back gate. The electric
current is deduced using Landauer-Buttiker formula. Results show that both energy gap and the electric current of the present
nanodevice depend very sensitively on the chiral indices of SWCNT, its diameter and its chiral angles. Also, oscillatory
behavior of the current is observed which is due to Coulomb blockade oscillations and Fano resonance. The present results are
found to be in concordant with those in the literature, which confirm the correctness of the proposed model. This study is
valuable for nanotechnology applications, e.g., soft and flexible nanoelectronics, nanoelectromechanical resonators and
photodetectors.